Ion Sources

Wide Beam EHV2.5 Ion Sources

Many years of R&D and industrial experience allow us create robust budgetary low cost technological End-Hall ion beam source EHV2.5 for a wide spectra of applications in labs and production. High ion current with low ion energies (in the range about 30 - 200 eV) provide high effective substrate surface cleaning and activation without ion radiation damage. EHV2.5 ion beam source works with Ar, Xe, N2, O2, CH4 and other gases and their mixes. Gridless design without expensive replaceable and realigned carbon or molybdenum grids provides budgetary price and low maintenance cost. Usage of high temperature materials and magnetic materials with highest Curie point requires no water cooling even for heavy duty working conditions, however water and radiation cooled models are available. The design of EHV2.5 ion beam source compensates the effects of thermal expansion of its heated components.

• Closed discharge chamber minimizes a working gas losses and magnetic core heating. The ring screen protects the magnetic core top flange of heating by cathode radiation.
• Broad divergent ion beam covers a wide 3D deposition zone providing a high throughput in different PVD coating processes.
• Only the cathode filament needs to be periodically replaced with no special tools or alignment. Two cathode filaments may be installed, so you don't need to terminate process and vent chamber to replace burnt filament - just re-switch power to the second spare cathode filament and finish the process. EHV2.5 ion beam source also works with such electron emitters like hollow cathode and others.
• Any suitable End Hall ion source power supply may be used to power EHV2.5 ion beam source. We recommend our IPS3500.2 power supply with two switchable cathode filament outputs.
• EHV2.5 ion beam source may be supplied with Swagelok^®, VCR^®, or customer specified gas fitting.
• EHV2.5 ion beam source disassembling for periodical cleaning and maintenance takes just a few minutes without removing from vacuum chamber and even without power wiring and gas supply disconnecting.

EHV2.5 ion beam source is intended for substrates in- situ pre-cleaning and ion beam assisting in the following PVD coating technologies:

• Resistive evaporation
• Electron beam evaporation
• Arc evaporation
• Magnetron sputtering

EHV2.5 ion beam source also may be used for DLC coating deposition, ion etching, surface modifications, and for other surface treatment applications in vacuum.
Excellent features and simple design allow an user upgrade with EHV2.5 ion beam source any existing coating machine and significantly improve coating processes performance:

• Increase film density and adhesion even to cold substrates
• Improve film structure
• Decrease film scattering and absorption
• Control index of refraction
• Decrease film stresses
• Improve coating stability.
• Realize deposition on cold substrates made of temperature sensitive materials.

Refraction indexes of some coating materials obtained with ion source EHV2.5 assisting, are shown below (Courtesy of Precision Glass& Optics, Inc.):




SPECIFICATIONS

Maximal anode current, A - Without water cooling, at least - With water cooling	6 10
Anode voltage, V	40 … 350
Ion beam divirgence, grad	80
Operating pressure range, Pa (depends on vacuum chamber pumping speed)	5x10-3 ... 10-3
Working gases	Ar, Xe, N2, O2, CH4 and other gases and their mixes
Ion source overall dimensions, inches (without standoffs)	Ø5.5x7.5
Ion source weight, lb	10

Click on the picture to magnify it:

Download Broad Beam Ion Source EHV2.5 brochure

Linear Ion Sources

We offer patented single and dual beam anodic layer linear ion sources with the length from about 250 mm to 2500 mm and cross section about (40-60)x(100-150) mm. These ion sources are mainly used for ion beam substrates pre-cleaning and ion beam assisted coating deposition by linear resistive and arc evaporators and magnetron sputtering systems in single chambers and in-line coating machines.

Our linear ion sources have well stabilized magnetic system providing maximal ion current and energy values and pole tips long life. Optimized water cooling system allows work at up to 300^oC temperature on the ion source surface.

Electrical, gas, and water communications may be supplied to ion source via so called "atmosphere tube". There are no wires and pipes inside a vacuum chamber, all communications are located inside a stainless steel tube. That tube installed in appropriate linear or rotary vacuum motion feedthrough may serve to move ion source with the help of some driver installed outside a vacuum chamber.

Typical linear ion sources specifications are shown below:

	Single beam IS1450S	Single beam IS1450t thermostabilized	Dual beam IS1300D
Discharge voltage, kV	1 ... 3.5	1 ... 4.0	1 ... 2.0
Ion current, A	0.05 ... 1.5	0.05 ... 1.5	up to 1.5
Working gas pressure, Pa	0.03 ... 0.15	0.06 ... 0.09	0.05 ... 0.07
Ion energy, keV	0.5 ... 1.3	0.5 ... 0.8	0.5 ... 0.8
Overall dimensions (LxWxH), mm	~1500x100x50	~1500x102x44	~1400x100x86

Circular anodic layer ion sources are also supplied. Besides, we offer technological low energy high current End Hall plasma accelerator with extended acceleration zone - the best tool for processes required high sputtering rates (ion beam sputtering) and/or lowest level of irradiation defects on a surface to be sputtered (ion beam milling, precise optical components ion beam figuring, and similar ones). Contact us for more detailed information!

We are sorry, this page is still under construction! Please visit us later to see more ion sources. If you need more detailed information or looking for some special ion sources, please contact us directly. Thanks for your patience!

VECOR 101 Duranzo Aisle, Irvine, CA92606, USA
Phone: +1-949-394-4466, Fax: +1-949-451-6813, info@vecorus.com